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Epitaxial GdSi1.7 prepared by ion beam synthesis on (111) silicon

dc.contributor.authorBender, Hugo
dc.contributor.authorJin, S.
dc.contributor.authorWu, Ming Fang
dc.contributor.authorVantomme, Andre
dc.contributor.authorPattyn, Hugo
dc.contributor.authorLangouche, H.
dc.date.accessioned2021-09-29T14:16:38Z
dc.date.available2021-09-29T14:16:38Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1076
dc.sourceIIOimport
dc.titleEpitaxial GdSi1.7 prepared by ion beam synthesis on (111) silicon
dc.typeOral presentation
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorPattyn, Hugo
dc.source.peerreviewno
dc.source.conferenceEUREM96 - XIth European Congress on Microscopy; August 26-30, 1996; Dublin, Ireland.
dc.source.conferencelocation
imec.availabilityPublished - imec


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