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An integrated 5 GHz low-noise amplifier with 5.5 kV HBM ESD protection in 90nm RF CMOS

dc.contributor.authorLinten, Dimitri
dc.contributor.authorThijs, Steven
dc.contributor.authorJeamsaksiri, Wutthinan
dc.contributor.authorRamos, Javier
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorWambacq, Piet
dc.contributor.authorMahadeva Iyer, Natarajan
dc.contributor.authorScholten, Andries J.
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-16T02:57:56Z
dc.date.available2021-10-16T02:57:56Z
dc.date.issued2005-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10789
dc.sourceIIOimport
dc.titleAn integrated 5 GHz low-noise amplifier with 5.5 kV HBM ESD protection in 90nm RF CMOS
dc.typeProceedings paper
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorWambacq, Piet
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecWambacq, Piet::0000-0003-4388-7257
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage86
dc.source.endpage89
dc.source.conferenceSymposium on VLSI Circuits Technical Digest
dc.source.conferencedate16/06/2005
dc.source.conferencelocationKyoto Japan
imec.availabilityPublished - imec


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