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dc.contributor.authorLoo, Roger
dc.contributor.authorVerheyen, Peter
dc.contributor.authorEneman, Geert
dc.contributor.authorRooyackers, Rita
dc.contributor.authorLeys, Frederik
dc.contributor.authorShamiryan, Denis
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorAbsil, Philippe
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-16T03:02:42Z
dc.date.available2021-10-16T03:02:42Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10803
dc.sourceIIOimport
dc.titleCharacteristics of Selective Epitaxial SiGe and Si Deposition processes for recessed source/drain applications
dc.typeProceedings paper
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecVerheyen, Peter::0000-0002-8245-9442
dc.source.peerreviewno
dc.source.conferenceASM Users Meeting
dc.source.conferencedate29/09/2005
dc.source.conferencelocationMünchen Germany
imec.availabilityPublished - imec


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