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Lateral distribution of electrons trapped in nitride layers

dc.contributor.authorLorenzini, Martino
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorBreuil, Laurent
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-16T03:03:18Z
dc.date.available2021-10-16T03:03:18Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10804
dc.sourceIIOimport
dc.titleLateral distribution of electrons trapped in nitride layers
dc.typeProceedings paper
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpageD1.3
dc.source.conferenceMaterials and Processes for Nonvolatile Memories
dc.source.conferencedate29/11/2004
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec
imec.internalnotesMaterials Research Society Symposium Proceedings; Vol. 830


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