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Interface trap characterization and Fermi-level pinning in Si-passivated Ge/HfO2 capacitors

dc.contributor.authorMartens, Koen
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-10-16T03:17:08Z
dc.date.available2021-10-16T03:17:08Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10854
dc.sourceIIOimport
dc.titleInterface trap characterization and Fermi-level pinning in Si-passivated Ge/HfO2 capacitors
dc.typeMeeting abstract
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.source.peerreviewyes
dc.source.beginpage493
dc.source.conferenceMeeting Abstracts ECS Fall Meeting
dc.source.conferencedate16/10/2005
dc.source.conferencelocationLos Angeles, CA USA
imec.availabilityPublished - imec


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