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Growth and characterization of atomic layer deposited WCxNy

dc.contributor.authorMartin Hoyas, Ana
dc.contributor.authorTravaly, Youssef
dc.contributor.authorSchuhmacher, Jorg
dc.contributor.authorSajavaara, T.
dc.contributor.authorWhelan, Caroline
dc.contributor.authorEyckens, Brenda
dc.contributor.authorRichard, Olivier
dc.contributor.authorGiangrandi, Simone
dc.contributor.authorBrijs, Bert
dc.contributor.authorJonas, A.M.
dc.contributor.authorVantomme, A.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCelis, Jean-Pierre
dc.contributor.authorMaex, Karen
dc.date.accessioned2021-10-16T03:20:12Z
dc.date.available2021-10-16T03:20:12Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10865
dc.sourceIIOimport
dc.titleGrowth and characterization of atomic layer deposited WCxNy
dc.typeOral presentation
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMaex, Karen
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewno
dc.source.conferenceAVS 5th International Conference on Microelectronics and Interfaces (ICMI)
dc.source.conferencedate1/03/2005
dc.source.conferencelocationSanta Clara, CA USA
imec.availabilityPublished - imec


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