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Contributions of channel gate and overlap gate currents on 1/f gate current noise for thin gate oxide p-MOSFETs

dc.contributor.authorMartinez, F.
dc.contributor.authorLaigle, A.
dc.contributor.authorHoffmann, A.
dc.contributor.authorValenza, M.
dc.contributor.authorVeloso, Anabela
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-16T03:20:50Z
dc.date.available2021-10-16T03:20:50Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10867
dc.sourceIIOimport
dc.titleContributions of channel gate and overlap gate currents on 1/f gate current noise for thin gate oxide p-MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorJurczak, Gosia
dc.source.peerreviewno
dc.source.beginpage243
dc.source.endpage246
dc.source.conferenceNoise and Fluctuations: 18th International Conference on Noise and Fluctuations - ICNF
dc.source.conferencedate19/09/2005
dc.source.conferencelocationSalamanca Spain
imec.availabilityPublished - imec
imec.internalnotesAIP Conference Proceedings; Vol. 780


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