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45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment

dc.contributor.authorMitsuhashi, Riichirou
dc.contributor.authorYamamoto, Kazuhiko
dc.contributor.authorHayashi, S.
dc.contributor.authorRothschild, Aude
dc.contributor.authorKubicek, Stefan
dc.contributor.authorVeloso, Anabela
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorJurczak, Gosia
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorBiesemans, Serge
dc.contributor.authorNiwa, M.
dc.date.accessioned2021-10-16T03:28:02Z
dc.date.available2021-10-16T03:28:02Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10892
dc.sourceIIOimport
dc.title45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment
dc.typeJournal article
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage7
dc.source.endpage10
dc.source.journalMicroelectronic Engineering
dc.source.volume80
imec.availabilityPublished - imec
imec.internalnotesPaper from the 14th biennial Conference on Insulating Films on Semiconductors, Leuven, June 2005


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