Show simple item record

Modeling of doping profile in active-silicon region of silicon-on-insulator transistor as a function of channel length

dc.contributor.authorMody, Jay
dc.contributor.authorGhosh, Prasanta
dc.date.accessioned2021-10-16T03:28:51Z
dc.date.available2021-10-16T03:28:51Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10895
dc.sourceIIOimport
dc.titleModeling of doping profile in active-silicon region of silicon-on-insulator transistor as a function of channel length
dc.typeProceedings paper
dc.source.peerreviewyes
dc.source.conferenceDigest International Semiconductor Device Research Symposium
dc.source.conferencedate7/12/2005
dc.source.conferencelocationWashington D.C. USA
imec.availabilityPublished - imec
imec.internalnotesCD-ROM Proceedings


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record