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New widely tuned edge-emitting laser diodes at 1.55 μm developed in the European IST-project NEWTON

dc.contributor.authorMorthier, Geert
dc.contributor.authorLaroy, Reinhard
dc.contributor.authorChristiaens, Ilse
dc.contributor.authorTodt, R.
dc.contributor.authorJacke, Thomas J.
dc.contributor.authorAmann, M.C.
dc.contributor.authorWesstrom, J.O.
dc.contributor.authorHammerfeldt, S.
dc.contributor.authorMullane, T.
dc.contributor.authorRyan, N.
dc.contributor.authorTodd, M.
dc.date.accessioned2021-10-16T03:33:43Z
dc.date.available2021-10-16T03:33:43Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10912
dc.sourceIIOimport
dc.titleNew widely tuned edge-emitting laser diodes at 1.55 μm developed in the European IST-project NEWTON
dc.typeProceedings paper
dc.contributor.imecauthorMorthier, Geert
dc.contributor.orcidimecMorthier, Geert::0000-0003-1819-6489
dc.source.peerreviewno
dc.source.beginpage1
dc.source.endpage8
dc.source.conferenceSemiconductor and Organic Optoelectronic Materials and Devices
dc.source.conferencedate7/11/2004
dc.source.conferencelocationBeijing China
imec.availabilityPublished - imec
imec.internalnotesProceedings of SPIE; Vol. 5624


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