Publication:
Low voltage stress-induced leakage current in 1.4 - 2.1 nm SiON and HfSiON gate dielectric layers
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1916 since deposited on 2021-10-16
Acq. date: 2025-12-10
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Views
1916 since deposited on 2021-10-16
Acq. date: 2025-12-10
Citations