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Low voltage stress-induced leakage current in 1.4 - 2.1 nm SiON and HfSiON gate dielectric layers

dc.contributor.authorO'Connor, Robert
dc.contributor.authorMcDonnell, Stephen
dc.contributor.authorHughes, Greg
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKauerauf, Thomas
dc.date.accessioned2021-10-16T03:44:27Z
dc.date.available2021-10-16T03:44:27Z
dc.date.issued2005-08
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10949
dc.sourceIIOimport
dc.titleLow voltage stress-induced leakage current in 1.4 - 2.1 nm SiON and HfSiON gate dielectric layers
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.source.peerreviewno
dc.source.beginpage668
dc.source.endpage672
dc.source.journalSemiconductor Science and Technology
dc.source.volume20
imec.availabilityPublished - imec


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