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On the impact of the high-k properties (and defects) on the MOSFET electrical characteristics
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On the impact of the high-k properties (and defects) on the MOSFET electrical characteristics
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Date
2005
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Pantisano, Luigi
;
Afanasiev, Valeri
;
Ragnarsson, Lars-Ake
;
Houssa, Michel
;
Degraeve, Robin
;
Groeseneken, Guido
;
De Gendt, Stefan
;
Heyns, Marc
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Views
1853
since deposited on 2021-10-16
2
last month
2
last week
Acq. date: 2026-01-09
Citations