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Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin-gate-oxide partially depleted SOI NMOSFETs

dc.contributor.authorRafi, J.M.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorCanmpabadal, F.
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T04:21:26Z
dc.date.available2021-10-16T04:21:26Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11073
dc.sourceIIOimport
dc.titleImpact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin-gate-oxide partially depleted SOI NMOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.source.peerreviewno
dc.source.beginpage1536
dc.source.endpage1546
dc.source.journalSolid-State Electronics
dc.source.issue5
dc.source.volume49
imec.availabilityPublished - imec
imec.internalnotesPapers selected from the EUROSOI Workshop; Granada; 19-21 January 2005


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