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High Performing 8 Å EOT HfO2 / TaN Low Thermal-Budget n-channel FETs with Solid-Phase Epitaxially Regrown (SPER) Junctions

dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSeveri, Simone
dc.contributor.authorTrojman, Lionel
dc.contributor.authorBrunco, David
dc.contributor.authorJohnson, Kevin D.
dc.contributor.authorDelabie, Annelies
dc.contributor.authorSchram, Tom
dc.contributor.authorTsai, Wilman
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-16T04:23:20Z
dc.date.available2021-10-16T04:23:20Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11079
dc.sourceIIOimport
dc.titleHigh Performing 8 Å EOT HfO2 / TaN Low Thermal-Budget n-channel FETs with Solid-Phase Epitaxially Regrown (SPER) Junctions
dc.typeProceedings paper
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecDelabie, Annelies::0000-0001-9739-7419
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.source.peerreviewno
dc.source.beginpage234
dc.source.endpage235
dc.source.conferenceSymposium on VLSI Technology. Digest of Technical Papers
dc.source.conferencedate14/06/2005
dc.source.conferencelocationKyoto Japan
imec.availabilityPublished - imec


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