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HfO2/spacer-interface breakdown in HfO2 high-k/poly-silicon gate stacks

dc.contributor.authorRanjan, R
dc.contributor.authorPey, K.L.
dc.contributor.authorTung, C.H.
dc.contributor.authorTang, L.J.
dc.contributor.authorElattari, Brahim
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDegraeve, Robin
dc.contributor.authorAng, D.S.
dc.contributor.authorBera, L.K.
dc.date.accessioned2021-10-16T04:25:11Z
dc.date.available2021-10-16T04:25:11Z
dc.date.issued2005-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11084
dc.sourceIIOimport
dc.titleHfO2/spacer-interface breakdown in HfO2 high-k/poly-silicon gate stacks
dc.typeJournal article
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.source.peerreviewno
dc.source.beginpage370
dc.source.endpage373
dc.source.journalMicroelectronic Engineering
imec.availabilityPublished - imec
imec.internalnotesPaper from the 14th biennial Conference on Insulating Films on Semiconductors, Leuven, June 2005


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