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Modeling the suppression of boron diffusion in Si/Si/Ge due to carbon incorporation

dc.contributor.authorRizk, Samer
dc.contributor.authorYaser M., Haddara
dc.contributor.authorSibaja-Hernandez, Arturo
dc.date.accessioned2021-10-16T04:32:30Z
dc.date.available2021-10-16T04:32:30Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11108
dc.sourceIIOimport
dc.titleModeling the suppression of boron diffusion in Si/Si/Ge due to carbon incorporation
dc.typeProceedings paper
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.source.peerreviewno
dc.source.beginpage315
dc.source.endpage322
dc.source.conferenceProceedings of 8th Int. Workshop on the Fabrication, characterization and Modeling of Ultra Shallow Junctions in Semiconductors
dc.source.conferencedate5/06/2005
dc.source.conferencelocationDaytona Beach, FL USA
imec.availabilityPublished - imec


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