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Effective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode

dc.contributor.authorRudenko, Tamara
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorKilchytska, V.
dc.contributor.authorJurczak, Gosia
dc.contributor.authorFlandre, Denis
dc.date.accessioned2021-10-16T04:42:24Z
dc.date.available2021-10-16T04:42:24Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11140
dc.sourceIIOimport
dc.titleEffective mobility in FinFET structures with HfO2 and SiON gate dielectrics and TaN gate electrode
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage386
dc.source.endpage389
dc.source.journalMicroelectronic Engineering
dc.source.volume80
imec.availabilityPublished - imec
imec.internalnotesPaper from the 14th biennial Conference on Insulating Films on Semiconductors, Leuven, June 2005


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