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Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors

dc.contributor.authorSchram, Tom
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorLujan, Guilherme
dc.contributor.authorDeweerd, Wim
dc.contributor.authorChen, Jerry
dc.contributor.authorTsai, Wilman
dc.contributor.authorHenson, Kirklen
dc.contributor.authorLander, Rob
dc.contributor.authorHooker, Jacob
dc.contributor.authorVertommen, Johan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-16T04:55:40Z
dc.date.available2021-10-16T04:55:40Z
dc.date.issued2005-03
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11180
dc.sourceIIOimport
dc.titlePerformance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors
dc.typeJournal article
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage779
dc.source.endpage782
dc.source.journalMicroelectronics Reliability
dc.source.issue5_6
dc.source.volume45
imec.availabilityPublished - imec


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