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Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorLukyanchikova, N.
dc.contributor.authorGabar, N.
dc.contributor.authorSmolanka, A.
dc.date.accessioned2021-10-16T05:03:48Z
dc.date.available2021-10-16T05:03:48Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11205
dc.sourceIIOimport
dc.titleElectron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage113
dc.source.endpage116
dc.source.conferenceProceedings of ULIS
dc.source.conferencedate7/04/2005
dc.source.conferencelocationBologna Italy
imec.availabilityPublished - imec


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