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Impact of strain and strain-relaxation on the low-frequency noise of SRB silicon n-MOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorEneman, Geert
dc.contributor.authorClaeys, Cor
dc.contributor.authorVerheyen, Peter
dc.contributor.authorDelhougne, Romain
dc.contributor.authorLoo, Roger
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-16T05:04:29Z
dc.date.available2021-10-16T05:04:29Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11207
dc.sourceIIOimport
dc.titleImpact of strain and strain-relaxation on the low-frequency noise of SRB silicon n-MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage529
dc.source.endpage532
dc.source.conferenceProceedings of the 35th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate13/09/2005
dc.source.conferencelocationGrenoble France
imec.availabilityPublished - imec


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