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Floating body/floating well effects in deep submicron MOSFETs at liquid nitrogen temperature

dc.contributor.authorSimoen, Eddy
dc.contributor.authorHayama, K.
dc.contributor.authorTakakura, K.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorClaeys, Cor
dc.contributor.authorOhyama, H.
dc.date.accessioned2021-10-16T05:06:21Z
dc.date.available2021-10-16T05:06:21Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11212
dc.sourceIIOimport
dc.titleFloating body/floating well effects in deep submicron MOSFETs at liquid nitrogen temperature
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.source.peerreviewno
dc.source.beginpage455
dc.source.endpage463
dc.source.conferenceProceedings SBMicro: 20th Symposium on Microelectronics Technology and Devices
dc.source.conferencedate5/09/2005
dc.source.conferencelocationFlorianopolis Brazil
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. 2005-08


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