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Optimization of low-temperature silicon nitride processes for improvement of device performance

dc.contributor.authorSleeckx, Erik
dc.contributor.authorSchaekers, Marc
dc.contributor.authorShi, Xiaoping
dc.contributor.authorKunnen, Eddy
dc.contributor.authorDegroote, Bart
dc.contributor.authorJurczak, Gosia
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorAugendre, Emmanuel
dc.date.accessioned2021-10-16T05:09:11Z
dc.date.available2021-10-16T05:09:11Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11220
dc.sourceIIOimport
dc.titleOptimization of low-temperature silicon nitride processes for improvement of device performance
dc.typeJournal article
dc.contributor.imecauthorSleeckx, Erik
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.orcidimecSleeckx, Erik::0000-0003-2560-6132
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.source.peerreviewno
dc.source.beginpage865
dc.source.endpage868
dc.source.journalMicroelectronics Reliability
dc.source.issue5_6
dc.source.volume45
imec.availabilityPublished - imec


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