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Electrical and structural properties of oxygen-precipitation induced extended defects in silicon

dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVanhellemont, Jan
dc.date.accessioned2021-09-29T14:19:16Z
dc.date.available2021-09-29T14:19:16Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1123
dc.sourceIIOimport
dc.titleElectrical and structural properties of oxygen-precipitation induced extended defects in silicon
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpageI.4.1
dc.source.conferenceInternational Conference on Extended Defects in Semiconductors - EDS
dc.source.conferencedate8/09/1996
dc.source.conferencelocationGiens France
imec.availabilityPublished - open access


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