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Process- and irradiation-induced defects in silicon devices

dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVanhellemont, Jan
dc.date.accessioned2021-09-29T14:19:25Z
dc.date.available2021-09-29T14:19:25Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1125
dc.sourceIIOimport
dc.titleProcess- and irradiation-induced defects in silicon devices
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage244
dc.source.endpage257
dc.source.journalNuclear Instruments and Methods in Physics Research A
dc.source.volume377
imec.availabilityPublished - open access


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