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l/f Noise performance of n-MOSFETs with Hf-based gate dielectrics

dc.contributor.authorSrinivasan, P.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorPantisano, Luigi
dc.contributor.authorClaeys, Cor
dc.contributor.authorMisra, D.
dc.date.accessioned2021-10-16T05:21:54Z
dc.date.available2021-10-16T05:21:54Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11260
dc.sourceIIOimport
dc.titlel/f Noise performance of n-MOSFETs with Hf-based gate dielectrics
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage151
dc.source.endpage160
dc.source.conferenceAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS: New Materials, Processes and Equipment
dc.source.conferencedate16/05/2005
dc.source.conferencelocationQuebec Canada
imec.availabilityPublished - imec
imec.internalnotesElectrochemical Society Proceedings; Vol. PV 2005-05


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