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Channel length and oxide thickness scaling effects on low-frequency (1/f) noise in metal/high-k sub-micron MOSFETs

dc.contributor.authorSrinivasan, Purushothaman
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T05:22:14Z
dc.date.available2021-10-16T05:22:14Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11261
dc.sourceIIOimport
dc.titleChannel length and oxide thickness scaling effects on low-frequency (1/f) noise in metal/high-k sub-micron MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage133
dc.source.endpage138
dc.source.conferenceProceedings of the 8th Annual Workshop on Semiconductor Advances Future Electronics and Sensors - SAFE
dc.source.conferencedate17/11/2005
dc.source.conferencelocationVeldhoven The Netherlands
imec.availabilityPublished - imec


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