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Gate-dielectric interface effects in low frequency (1/f) noise in p-MOSFETs with high-K dielectrics

dc.contributor.authorSrinivasan, Purushothaman
dc.contributor.authorSimoen, Eddy
dc.contributor.authorSinganamalla, Raghunath
dc.contributor.authorYu, HongYu
dc.contributor.authorClaeys, Cor
dc.contributor.authorMisra, D.
dc.date.accessioned2021-10-16T05:23:35Z
dc.date.available2021-10-16T05:23:35Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11265
dc.sourceIIOimport
dc.titleGate-dielectric interface effects in low frequency (1/f) noise in p-MOSFETs with high-K dielectrics
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.conferenceInternational Semiconductor Device Research Symposium - ISDRS
dc.source.conferencedate7/12/2005
dc.source.conferencelocationBethesda, MD USA
imec.availabilityPublished - imec


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