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Effect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices

dc.contributor.authorTrojman, Lionel
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorPantisano, Luigi
dc.contributor.authorLujan, Guilherme
dc.contributor.authorHoussa, Michel
dc.contributor.authorSchram, Tom
dc.contributor.authorSchaekers, Marc
dc.contributor.authorVan Ammel, Annemie
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-16T05:49:06Z
dc.date.available2021-10-16T05:49:06Z
dc.date.issued2005-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11336
dc.sourceIIOimport
dc.titleEffect of the dielectric thickness and the metal deposition technique on the mobility for HfO2/TaN NMOS devices
dc.typeJournal article
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorVan Ammel, Annemie
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage86
dc.source.endpage89
dc.source.journalMicroelectronic Engineering
dc.source.volume80
imec.availabilityPublished - imec
imec.internalnotesPaper from the 14th biennial Conference on Insulating Films on Semiconductors, Leuven, June 2005


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