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dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorWeber, U.
dc.contributor.authorConard, Thierry
dc.contributor.authorKaushik, Vidya
dc.contributor.authorHoussa, Michel
dc.contributor.authorHyun, Sangjin
dc.contributor.authorSeitzinger, Bernard
dc.contributor.authorLehnen, Peer
dc.contributor.authorSchuhmacher, M.
dc.contributor.authorLindner, J.
dc.contributor.authorCaymax, Matty
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-16T06:08:36Z
dc.date.available2021-10-16T06:08:36Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11392
dc.sourceIIOimport
dc.titleElectrical characterization of capacitors with AVD- deposited hafnium silicates as high-k gate dielectric
dc.typeJournal article
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpageF185
dc.source.endpageF189
dc.source.journalJournal of the Electrochemical Society
dc.source.issue11
dc.source.volume152
imec.availabilityPublished - imec


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