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Transfer from MHEMT to GaN HEMT technology: devices and integration

dc.contributor.authorVandersmissen, Raf
dc.contributor.authorDas, Johan
dc.contributor.authorRuythooren, Wouter
dc.contributor.authorDerluyn, Joff
dc.contributor.authorGermain, Marianne
dc.contributor.authorXiao, Dongping
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-16T06:30:48Z
dc.date.available2021-10-16T06:30:48Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11455
dc.sourceIIOimport
dc.titleTransfer from MHEMT to GaN HEMT technology: devices and integration
dc.typeProceedings paper
dc.contributor.imecauthorRuythooren, Wouter
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.conferenceInternational Conference on Compound Semiconductor Manufacturing Technology Conference (csmantech) Digest
dc.source.conferencedate11/04/2005
dc.source.conferencelocationNew Orleans, LA USA
imec.availabilityPublished - imec


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