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Athermal germanium migration in strained silicon layers during junction formation with solid-phase epitaxial regrowth

dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorJanssens, Tom
dc.contributor.authorBrijs, Bert
dc.contributor.authorDelhougne, Romain
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorPawlak, Bartek
dc.contributor.authorPosselt, Matthias
dc.date.accessioned2021-10-16T06:34:05Z
dc.date.available2021-10-16T06:34:05Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11465
dc.sourceIIOimport
dc.titleAthermal germanium migration in strained silicon layers during junction formation with solid-phase epitaxial regrowth
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage81915
dc.source.journalApplied Physics Letters
dc.source.issue8
dc.source.volume86
imec.availabilityPublished - imec


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