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A new quantitative model to predict SILC-related disturb characteristics in Flash E2PROM devices

dc.contributor.authorDe Blauwe, Jan
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorWellekens, Dirk
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRoussel, Philippe
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorDeferm, Ludo
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-09-29T14:21:28Z
dc.date.available2021-09-29T14:21:28Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1150
dc.sourceIIOimport
dc.titleA new quantitative model to predict SILC-related disturb characteristics in Flash E2PROM devices
dc.typeProceedings paper
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage343
dc.source.endpage346
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate8/12/1996
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access


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