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In situ-grown ultra-thin Si3N4 passivation and gate dielectric layers for AlGaN/GaN insulating gate HFET

dc.contributor.authorWang, Wenfei
dc.contributor.authorDerluyn, Joff
dc.contributor.authorLeys, Maarten
dc.contributor.authorGermain, Marianne
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-16T07:02:22Z
dc.date.available2021-10-16T07:02:22Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11541
dc.sourceIIOimport
dc.titleIn situ-grown ultra-thin Si3N4 passivation and gate dielectric layers for AlGaN/GaN insulating gate HFET
dc.typeOral presentation
dc.contributor.imecauthorWang, Wenfei
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.conferenceElectronic Materials Conference
dc.source.conferencedate22/06/2005
dc.source.conferencelocationSanta Barbara, CA USA
imec.availabilityPublished - imec


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