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Influence of surface states on current slump and degradation in AlGaN/GaN HEMTs

dc.contributor.authorWang, Wenfei
dc.contributor.authorDerluyn, Joff
dc.contributor.authorSteudel, Soeren
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-16T07:02:45Z
dc.date.available2021-10-16T07:02:45Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11542
dc.sourceIIOimport
dc.titleInfluence of surface states on current slump and degradation in AlGaN/GaN HEMTs
dc.typeProceedings paper
dc.contributor.imecauthorWang, Wenfei
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage131
dc.source.endpage133
dc.source.conferenceWorkshop on Compound Semiconductor Devices & Integrated Circuits in Europe - WOCSDICE
dc.source.conferencedate16/05/2005
dc.source.conferencelocationCardiff UK
imec.availabilityPublished - imec


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