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Integration of a recessed SiGe Source/Drain into a PMOS transistor

dc.contributor.authorWashington, Lori
dc.contributor.authorNouri, Faran
dc.contributor.authorVerheyen, Peter
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorMoroz, Victor
dc.contributor.authorKawaguchi, Mark
dc.contributor.authorYihwan, Kim
dc.contributor.authorSamoilov, Arkadii
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-16T07:03:35Z
dc.date.available2021-10-16T07:03:35Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11544
dc.sourceIIOimport
dc.titleIntegration of a recessed SiGe Source/Drain into a PMOS transistor
dc.typeProceedings paper
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.source.peerreviewno
dc.source.conference5th International SEMI-ECS Semiconductor Technology Conference
dc.source.conferencedate15/03/2005
dc.source.conferencelocationShanghai China
imec.availabilityPublished - imec


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