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PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application

dc.contributor.authorYamamoto, Kazuhiko
dc.contributor.authorKubicek, Stefan
dc.contributor.authorRothschild, Aude
dc.contributor.authorMitsuhashi, Riichirou
dc.contributor.authorDeweerd, Wim
dc.contributor.authorVeloso, Anabela
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorWickramanayaka, S.
dc.contributor.authorHayashi, S.
dc.contributor.authorNiwa, Masaaki
dc.date.accessioned2021-10-16T07:19:25Z
dc.date.available2021-10-16T07:19:25Z
dc.date.issued2005-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11584
dc.sourceIIOimport
dc.titlePVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application
dc.typeJournal article
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage198
dc.source.endpage201
dc.source.journalMicroelectronic Engineering
dc.source.volume80
imec.availabilityPublished - imec
imec.internalnotesPaper from the 14th biennial Conference on Insulating Films on Semiconductors, Leuven, June 2005


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