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Properties and dynamic behavior of electron traps in HfO2/SiO2 stacks

dc.contributor.authorZhao, C.Z.
dc.contributor.authorZahid, Mohammed
dc.contributor.authorZhang, John
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDegraeve, Robin
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-16T07:28:13Z
dc.date.available2021-10-16T07:28:13Z
dc.date.issued2005-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11606
dc.sourceIIOimport
dc.titleProperties and dynamic behavior of electron traps in HfO2/SiO2 stacks
dc.typeJournal article
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage366
dc.source.endpage369
dc.source.journalMicroelectronic Engineering
dc.source.volume80
imec.availabilityPublished - imec
imec.internalnotesPaper from the 14th biennial Conference on Insulating Films on Semiconductors, Leuven, June 2005


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