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dc.contributor.authorAdelmann, Christoph
dc.contributor.authorLehnen, Peer
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorZhao, Chao
dc.contributor.authorBrijs, Bert
dc.contributor.authorFranquet, Alexis
dc.contributor.authorConard, Thierry
dc.contributor.authorRoeckerath, Martin
dc.contributor.authorSchubert, Jurgen
dc.contributor.authorBoissiere, Olivier
dc.contributor.authorLohe, Christoph
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-16T15:00:04Z
dc.date.available2021-10-16T15:00:04Z
dc.date.issued2007-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11621
dc.sourceIIOimport
dc.titleGrowth of dysprosium-, scandium-, and hafnium-based third generation high-k dielectrics by atomic-vapor deposition
dc.typeJournal article
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage567
dc.source.endpage573
dc.source.journalChemical Vapor Deposition
dc.source.volume13
dc.identifier.urlhttp://www3.interscience.wiley.com/cgi-bin/abstract/116329943/ABSTRACT
imec.availabilityPublished - imec


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