dc.contributor.author | Adelmann, Christoph | |
dc.contributor.author | Lehnen, Peer | |
dc.contributor.author | Van Elshocht, Sven | |
dc.contributor.author | Zhao, Chao | |
dc.contributor.author | Brijs, Bert | |
dc.contributor.author | Franquet, Alexis | |
dc.contributor.author | Conard, Thierry | |
dc.contributor.author | Roeckerath, Martin | |
dc.contributor.author | Schubert, Jurgen | |
dc.contributor.author | Boissiere, Olivier | |
dc.contributor.author | Lohe, Christoph | |
dc.contributor.author | De Gendt, Stefan | |
dc.date.accessioned | 2021-10-16T15:00:04Z | |
dc.date.available | 2021-10-16T15:00:04Z | |
dc.date.issued | 2007-10 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/11621 | |
dc.source | IIOimport | |
dc.title | Growth of dysprosium-, scandium-, and hafnium-based third generation high-k dielectrics by atomic-vapor deposition | |
dc.type | Journal article | |
dc.contributor.imecauthor | Adelmann, Christoph | |
dc.contributor.imecauthor | Van Elshocht, Sven | |
dc.contributor.imecauthor | Franquet, Alexis | |
dc.contributor.imecauthor | Conard, Thierry | |
dc.contributor.imecauthor | De Gendt, Stefan | |
dc.contributor.orcidimec | Adelmann, Christoph::0000-0002-4831-3159 | |
dc.contributor.orcidimec | Van Elshocht, Sven::0000-0002-6512-1909 | |
dc.contributor.orcidimec | Franquet, Alexis::0000-0002-7371-8852 | |
dc.contributor.orcidimec | Conard, Thierry::0000-0002-4298-5851 | |
dc.contributor.orcidimec | De Gendt, Stefan::0000-0003-3775-3578 | |
dc.source.peerreview | no | |
dc.source.beginpage | 567 | |
dc.source.endpage | 573 | |
dc.source.journal | Chemical Vapor Deposition | |
dc.source.volume | 13 | |
dc.identifier.url | http://www3.interscience.wiley.com/cgi-bin/abstract/116329943/ABSTRACT | |
imec.availability | Published - imec | |