Show simple item record

dc.contributor.authorAdelmann, Christoph
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorLehnen, Peer
dc.contributor.authorConard, Thierry
dc.contributor.authorFranquet, Alexis
dc.contributor.authorZhao, Chao
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorChang, Vincent S.
dc.contributor.authorCho, Hag-Ju
dc.contributor.authorYu, HongYu
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-16T15:00:06Z
dc.date.available2021-10-16T15:00:06Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11622
dc.sourceIIOimport
dc.titleDyScHfO as high-k gate dielectric: structural and electrical properties
dc.typeProceedings paper
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewyes
dc.source.beginpage113
dc.source.endpage120
dc.source.conferenceAdvanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS 3: New Materials, Processes and Equipment
dc.source.conferencedate6/05/2007
dc.source.conferencelocationChicago, IL USA
dc.identifier.urlhttp://www.ecsdl.org/vsearch/servlet/VerityServlet?KEY=ECSTF8&smode=strresults&sort=rel&maxdisp=25&threshold=0&pjournals=ECSTF8&
imec.availabilityPublished - imec
imec.internalnotesECS Trans.; Vol. 6, Issue 1


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record