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Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2

dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorStesmans, Andre
dc.contributor.authorDelabie, Annelies
dc.contributor.authorHoussa, Michel
dc.date.accessioned2021-10-16T15:00:12Z
dc.date.available2021-10-16T15:00:12Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11628
dc.sourceIIOimport
dc.titleElectronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2
dc.typeMeeting abstract
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorHoussa, Michel
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.source.peerreviewyes
dc.source.conference38th IEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate6/12/2007
dc.source.conferencelocationArlington, VA USA
imec.availabilityPublished - imec


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