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Quantifying self-heating effects with scaling in globally strained Si MOSFETS

dc.contributor.authorAgaiby, R.
dc.contributor.authorYang, Y.
dc.contributor.authorOlsen, S.H.
dc.contributor.authorO'Neill, A.G.
dc.contributor.authorEneman, Geert
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLoo, Roger
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T15:00:13Z
dc.date.available2021-10-16T15:00:13Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11629
dc.sourceIIOimport
dc.titleQuantifying self-heating effects with scaling in globally strained Si MOSFETS
dc.typeJournal article
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage1473
dc.source.endpage1478
dc.source.journalSolid-State Electronics
dc.source.issue11_12
dc.source.volume51
imec.availabilityPublished - imec


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