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Postdeposition-anneal effect on negative bias temperature instability in HfSiON gate stacks

dc.contributor.authorAoulaiche, Marc
dc.contributor.authorHoussa, Michel
dc.contributor.authorConard, Thierry
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-16T15:00:36Z
dc.date.available2021-10-16T15:00:36Z
dc.date.issued2007-03
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11647
dc.sourceIIOimport
dc.titlePostdeposition-anneal effect on negative bias temperature instability in HfSiON gate stacks
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage146
dc.source.endpage151
dc.source.journalIEEE Trans. Device and Materials Reliability
dc.source.issue1
dc.source.volume7
imec.availabilityPublished - imec


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