dc.contributor.author | Aoulaiche, Marc | |
dc.contributor.author | Houssa, Michel | |
dc.contributor.author | Deweerd, Wim | |
dc.contributor.author | Trojman, Lionel | |
dc.contributor.author | Conard, Thierry | |
dc.contributor.author | Maes, Jan | |
dc.contributor.author | De Gendt, Stefan | |
dc.contributor.author | Groeseneken, Guido | |
dc.contributor.author | Heyns, Marc | |
dc.date.accessioned | 2021-10-16T15:00:38Z | |
dc.date.available | 2021-10-16T15:00:38Z | |
dc.date.issued | 2007 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/11648 | |
dc.source | IIOimport | |
dc.title | Nitrogen incorporation in HfSiO(N)/TaN gate stacks: impact on performances and NBTI | |
dc.type | Journal article | |
dc.contributor.imecauthor | Houssa, Michel | |
dc.contributor.imecauthor | Conard, Thierry | |
dc.contributor.imecauthor | Maes, Jan | |
dc.contributor.imecauthor | De Gendt, Stefan | |
dc.contributor.imecauthor | Groeseneken, Guido | |
dc.contributor.imecauthor | Heyns, Marc | |
dc.contributor.orcidimec | Houssa, Michel::0000-0003-1844-3515 | |
dc.contributor.orcidimec | Conard, Thierry::0000-0002-4298-5851 | |
dc.contributor.orcidimec | De Gendt, Stefan::0000-0003-3775-3578 | |
dc.source.peerreview | no | |
dc.source.beginpage | 613 | |
dc.source.endpage | 615 | |
dc.source.journal | IEEE Electron Device Letters | |
dc.source.issue | 7 | |
dc.source.volume | 28 | |
imec.availability | Published - imec | |