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Nitrogen incorporation in HfSiO(N)/TaN gate stacks: impact on performances and NBTI

dc.contributor.authorAoulaiche, Marc
dc.contributor.authorHoussa, Michel
dc.contributor.authorDeweerd, Wim
dc.contributor.authorTrojman, Lionel
dc.contributor.authorConard, Thierry
dc.contributor.authorMaes, Jan
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-16T15:00:38Z
dc.date.available2021-10-16T15:00:38Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11648
dc.sourceIIOimport
dc.titleNitrogen incorporation in HfSiO(N)/TaN gate stacks: impact on performances and NBTI
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage613
dc.source.endpage615
dc.source.journalIEEE Electron Device Letters
dc.source.issue7
dc.source.volume28
imec.availabilityPublished - imec


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