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dc.contributor.authorAugendre, E.
dc.contributor.authorPawlak, Bartek
dc.contributor.authorKubicek, Stefan
dc.contributor.authorHoffmann, Thomas
dc.contributor.authorChiarella, Thomas
dc.contributor.authorKerner, Christoph
dc.contributor.authorSeveri, Simone
dc.contributor.authorFalepin, Annelies
dc.contributor.authorRamos, Emilio
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorEyben, Pierre
dc.contributor.authorVanhaeren, Danielle
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorJurczak, Gosia
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T15:01:04Z
dc.date.available2021-10-16T15:01:04Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11662
dc.sourceIIOimport
dc.titleSuperior N- and PMOSFET scalability using carbon co-implantation and spike annealing
dc.typeJournal article
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorKerner, Christoph
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorFalepin, Annelies
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorVanhaeren, Danielle
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecVanhaeren, Danielle::0000-0001-8624-9533
dc.source.peerreviewno
dc.source.beginpage1432
dc.source.endpage1436
dc.source.journalSolid-State Electronics
dc.source.issue11_12
dc.source.volume51
imec.availabilityPublished - imec


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