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A new lateral-IGBT structure with a wider safe operating area

dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDoutreloigne, Jan
dc.contributor.authorVanmeerbeek, P.
dc.contributor.authorMoens, P.
dc.date.accessioned2021-10-16T15:01:47Z
dc.date.available2021-10-16T15:01:47Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11679
dc.sourceIIOimport
dc.titleA new lateral-IGBT structure with a wider safe operating area
dc.typeJournal article
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDoutreloigne, Jan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage416
dc.source.endpage418
dc.source.journalIEEE Electron Device Letters
dc.source.issue5
dc.source.volume28
imec.availabilityPublished - open access


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