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On the asymmetric splitting of CBED HOLZ lines under the gate of recessed SiGe source/drain transistors

dc.contributor.authorBenedetti, Alessandro
dc.contributor.authorBender, Hugo
dc.date.accessioned2021-10-16T15:03:53Z
dc.date.available2021-10-16T15:03:53Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11717
dc.sourceIIOimport
dc.titleOn the asymmetric splitting of CBED HOLZ lines under the gate of recessed SiGe source/drain transistors
dc.typeProceedings paper
dc.contributor.imecauthorBender, Hugo
dc.source.peerreviewno
dc.source.beginpage411
dc.source.endpage414
dc.source.conferenceMicroscopy of Semiconducting Materials XV
dc.source.conferencedate2/04/2007
dc.source.conferencelocationCambridge UK
imec.availabilityPublished - imec
imec.internalnotesSpringer Proceedings in Physics; Vol. 120


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