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Corner enhancement of FNT program/erase operations in nitride storage FinFlash devices

dc.contributor.authorBreuil, Laurent
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorLoo, Josine
dc.contributor.authorFurnemont, Arnaud
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-16T15:10:40Z
dc.date.available2021-10-16T15:10:40Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11801
dc.sourceIIOimport
dc.titleCorner enhancement of FNT program/erase operations in nitride storage FinFlash devices
dc.typeProceedings paper
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorFurnemont, Arnaud
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecFurnemont, Arnaud::0000-0002-6378-1030
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.source.peerreviewno
dc.source.beginpage69
dc.source.endpage72
dc.source.conferenceProceedings 2nd International Conference on Memory Technology and Design - ICMTD
dc.source.conferencedate7/05/2007
dc.source.conferencelocationGiens France
imec.availabilityPublished - imec


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