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Effects of Al2O3 dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-k/metal gate pMOSFET applications

dc.contributor.authorChang, Vincent
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorYu, HongYu
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorConard, Thierry
dc.contributor.authorYin, KaiMin
dc.contributor.authorSchram, Tom
dc.contributor.authorMaes, Jan Willem
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T15:15:02Z
dc.date.available2021-10-16T15:15:02Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11841
dc.sourceIIOimport
dc.titleEffects of Al2O3 dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-k/metal gate pMOSFET applications
dc.typeJournal article
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage2378
dc.source.endpage2748
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue10
dc.source.volume54
imec.availabilityPublished - imec


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