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A new charge based compact model for lateral asymmetric MOSFET and its application to high voltage MOSFET modeling

dc.contributor.authorChauhan, Y.
dc.contributor.authorKrummenacher, F.
dc.contributor.authorAnghel, C.
dc.contributor.authorGillon, R.
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDeclercq, M.
dc.contributor.authorIonescu, A.
dc.date.accessioned2021-10-16T15:15:12Z
dc.date.available2021-10-16T15:15:12Z
dc.date.issued2007-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11842
dc.sourceIIOimport
dc.titleA new charge based compact model for lateral asymmetric MOSFET and its application to high voltage MOSFET modeling
dc.typeProceedings paper
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage177
dc.source.endpage182
dc.source.conference20th International Conference on VLSI Design
dc.source.conferencedate6/01/2007
dc.source.conferencelocationBangalore India
imec.availabilityPublished - open access


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